[전자] [解法(해법)]반도체물성과소자 semicondutor phsics and deviceDonald A. Neamen3판
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작성일 20-11-12 23:03
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Problem Solutions
[data(資料)범위] [解法(해법)]semicondutor phsics and deviceDonald A. Neamen3판
8 Ge atoms per unit cell
1 enclosed atom = 1 atom
1.2
[참고data(資料)] [解法(해법)]semicondutor phsics and deviceDonald A. Neamen3판
(c) Diamond: 8 corner atoms × 1/8 = 1 atom
−
5 65 10 8 3
4 As atoms per unit cell, so that
레포트 > 공학,기술계열
Density of Ga = − 2.22 1022 3 x cm
(a) Simple cubic lattice; a = 2r
K J 1
3
(a) 4 Ga atoms per unit cell
6 face atoms × ½ = 3 atoms
(b)
−
8
(a) fcc: 8 corner atoms × 1/8 = 1 atom
[전자] [解法(해법)]반도체물성과소자 semicondutor phsics and deviceDonald A. Neamen3판
Unit cell vol = a = ( r) = r 3 3 3 2 8
만약 내용이 다를시 해피래포트에 환불요청하시면 환불됩니다.
Total of 8 atoms per unit cell
반도체물성,소자,솔루션,semicondutor,Neamen,3판
Density = ⇒
Density = ⇒
4
순서
Total of 2 atoms per unit cell
b . x g
4 enclosed atoms = 4 atoms
Density of Ge = − 4.44 1022 3 x cm
[솔루션]semicondutor phsics and deviceDonald A. Neamen3판 [참고자료] [솔루션]semicondutor phsics and deviceDonald A. Neamen3판 [자료범위] [솔루션]semicondutor phsics and deviceDonald A. Neamen3판 [이용대상] [솔루션]semicondutor phsics and deviceDonald A. Neamen3판
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[解法(해법)]semicondutor phsics and deviceDonald A. Neamen3판
[이용대상] [解法(해법)]semicondutor phsics and deviceDonald A. Neamen3판
Total of 4 atoms per unit cell
565 10 8 3 b . x g
6 face atoms × ½ = 3 atoms
설명
H G I
1.3
1.1
1 atom per cell, so atom vol. = ( )F
(b) bcc: 8 corner atoms × 1/8 = 1 atom
Density of As = − 2.22 1022 3 x cm
4
다.
